QuantumForge
Semiconductor Modeling, LLC

Publications

 

Selected Publications

 

Recent Wide-Bandgap and Avalanche Photodetector Work

 
       
  • H. Jeong et al., including P. D. Yoder, “Development of wide-bandgap avalanche photodetectors for the ultraviolet spectral region,” Advanced Photonics, 8, 024001, 2026.
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  • H. Cui, W. A. Doolittle, L. Graber and P. D. Yoder, “First-Principles Study of Structural, Elastic, and Piezoelectric Properties of Wurtzite Superlattice ScxAl1−xN, ScxGa1−xN, and ScxIn1−xN Alloys,” physica status solidi (b), 263, e202500050, 2026.
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  • P. D. Yoder, “Theoretical Modeling of Avalanche Currents in GaN,” Gallium Nitride and Related Materials: Device Processing and Materials, 2025.
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Photodetectors and Avalanche Photodiodes

 
       
  • S.-C. Shen et al., including P. D. Yoder, “Performance of deep ultraviolet GaN avalanche photodiodes grown by MOCVD,” IEEE Photonics Technology Letters, 19, 1744–1746, 2007.
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  • R. D. Dupuis et al., including P. D. Yoder, “Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes,” Journal of Crystal Growth, 310, 5217–5222, 2008.
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  • S. Choi et al., including P. D. Yoder, “Geiger-mode operation of GaN avalanche photodiodes grown on GaN substrates,” IEEE Photonics Technology Letters, 21, 1526–1528, 2009.
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  • P. D. Yoder and E. J. Flynn, “Linear theory of the quasi-unipolar photodiode,” Journal of Lightwave Technology, 24, 1937, 2006.
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  • P. D. Yoder and E. J. Flynn, “Quasi-unipolar InGaAs/InP photodetection for enhanced optical saturation power and maximal bandwidth,” Applied Physics Letters, 91, 2007.
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  • P. D. Yoder, “Bandwidth and charge balancing of partially depleted absorber photodiodes,” IEEE Journal of Quantum Electronics, 43, 992–997, 2007.
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  • H. Pan et al., including P. D. Yoder, “A high-linearity modified uni-traveling carrier photodiode with offset effects of nonlinear capacitance,” Journal of Lightwave Technology, 27, 4435–4439, 2009.
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  • P. D. Yoder, “Physical modeling of high-speed PIN photodetectors,” Physics and Simulation of Optoelectronic Devices IX, 4283, 499–510, 2001.
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III-Nitride Lasers, LEDs, and Photonic Devices

 
       
  • J.-H. Ryou et al., including P. D. Yoder, “Control of quantum-confined Stark effect in InGaN-based quantum wells,” IEEE Journal of Selected Topics in Quantum Electronics, 15, 1080–1091, 2009.
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  • H. J. Kim et al., including P. D. Yoder, “Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes,” Applied Physics Letters, 96, 2010.
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  • X. H. Li et al., including P. Douglas Yoder, “Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates,” Applied Physics Letters, 105, 2014.
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  • Z. Lochner et al., including P. D. Yoder, “Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate,” Applied Physics Letters, 102, 2013.
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  • X. H. Li et al., including P. D. Yoder, “Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate,” Applied Physics Letters, 106, 2015.
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  • M. M. Satter et al., including P. D. Yoder, “Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers,” IEEE Journal of Quantum Electronics, 48, 703–711, 2012.
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  • K. Mehta et al., including P. D. Yoder, “Lateral current spreading in III-N ultraviolet vertical-cavity surface-emitting lasers using modulation-doped short period superlattices,” IEEE Journal of Quantum Electronics, 54, 1–7, 2018.
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  • K. Mehta et al., including P. D. Yoder, “Thermal design considerations for III-N vertical-cavity surface-emitting lasers using electro-opto-thermal numerical simulations,” IEEE Journal of Quantum Electronics, 55, 1–8, 2019.
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Transport Physics and Numerical Device Modeling

 
       
  • P. D. Yoder, V. D. Natoli and R. M. Martin, “Ab initio analysis of the electron-phonon interaction in silicon,” Journal of Applied Physics, 73, 4378–4383, 1993.
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  • P. D. Yoder and K. Hess, “First-principles Monte Carlo simulation of transport in Si,” Semiconductor Science and Technology, 9, 852–854, 1994.
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  • P. D. Yoder, J. M. Higman, J. Bude and K. Hess, “Monte Carlo simulation of hot electron transport in Si using a unified pseudopotential description of the crystal,” Semiconductor Science and Technology, 7, B357–B359, 1992.
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  • P. D. Yoder, K. Gärtner and W. Fichtner, “A generalized Ramo-Shockley theorem for classical to quantum transport at arbitrary frequencies,” Journal of Applied Physics, 79, 1951–1954, 1996.
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  • P. D. Yoder, K. Gartner, U. Krumbein and W. Fichtner, “Optimized terminal current calculation for Monte Carlo device simulation,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1997.
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  • S. Sridharan and P. D. Yoder, “Anisotropic transient and stationary electron velocity in bulk wurtzite GaN,” IEEE Electron Device Letters, 29, 1190–1192, 2008.
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  • S. Sridharan et al., including P. D. Yoder, “Temperature- and doping-dependent anisotropic stationary electron velocity in wurtzite GaN,” IEEE Electron Device Letters, 32, 1522–1524, 2011.
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  • M. V. Fischetti et al., including P. D. Yoder, “‘Hot electrons in Si lose energy mostly to optical phonons’: Truth or myth?” Applied Physics Letters, 114, 2019.
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    A fuller publication record is available through           Google Scholar     .  

 

    Publications are listed to document Dr. P. Douglas Yoder’s technical background.     They do not imply sponsorship, endorsement, or ownership by QuantumForge Semiconductor Modeling, LLC.